Dynamic x-ray detecting panel, x-ray detector having the same, and method of driving x-ray detector

ABSTRACT

A dynamic X-ray detecting panel, an X-ray detector including the same, and a method of driving an X-ray detector are disclosed. The method of driving the X-ray detector is a method of driving a dynamic X-ray detector including the X-ray detecting panel. The X-ray detecting panel includes multiple pixels arranged in a matrix, each of the pixels includes a readout thin film transistor, a reset thin film transistor, and a photodiode, and line reset, window time, and readout proceed with respect to the multiple pixels in each row.

CROSS-REFERENCE TO RELATED APPLICATION

This patent document claims priority to and the benefit of Korean PatentApplication No. 10-2021-0122648, filed on Sep. 14, 2021, the entiredisclosure of which is incorporated by reference for all purposes as iffully set forth herein.

FIELD

Embodiment of the present invention is related to an X-ray detectingpanel, an X-ray detector including the same, and a method of driving anX-ray detector, and more particularly to a high frame rate dynamic X-raydetecting panel, an X-ray detector including the same, and a method ofdriving the X-ray detector.

BACKGROUND

An X-ray detector is used not only in medical equipment for X-raydiagnostic imaging in hospitals and dental clinics, but also forinternal defect inspection of electric vehicle batteries,semiconductors, electronic components, construction, aviation, ships,and the like, for industrial equipment for inspecting loading andunloading goods at airports and port facilities, and in militaryequipment for detecting dangerous substances, such as explosives and thelike.

Dynamic X-ray detectors are used in medical and industrial imagingsystems and the use of dynamic X-ray detectors for industrial purposesis growing specifically in non-destructive testing that is essential forproduct reliability, such as electric vehicle batteries orsemiconductors. For medical purposes, dynamic X-ray detectors are usedin, for example, C-arm CT, cone beam CT, breast cancer diagnosis CT, andthe like.

Dynamic X-ray detectors are required to have a high frame rate, lowimage lag, and low ghost image in order to realize high frame rateimages.

The X-ray detector includes an X-ray detecting panel, which is a dynamicimaging sensor. The X-ray detecting panel may detect visible lightthrough a scintillator by converting X-ray to visible light.

FIG. 1 is a schematic layout diagram of an X-ray detecting panel of aconventional dynamic X-ray detector.

Referring to FIG. 1 , a conventional X-ray detecting panel includes aplurality of pixels N, N+1, N+2, . . . , each Nth pixel of whichincludes a readout thin film transistor (TFT) and a photodiode.

In the thin film transistor, a readout terminal, that is, a drain, isconnected to a readout IC through a readout pad and a gate is connectedto a gate IC through a gate pad.

The photodiode is connected to a bias terminal through a bias pad.

FIG. 2 is a schematic diagram illustrating switching operation of thereadout thin film transistor in the conventional X-ray detecting paneland FIG. 3 is a schematic diagram illustrating drive timing of theconventional X-ray detecting panel.

First, referring to FIG. 2 , the conventional X-ray detecting panelobtains image data through sequential steps of global reset, window timeand readout. The readout TFT is switched on upon global reset, switchedoff in window time, and switched on in the readout step.

Referring to FIG. 3 , the global reset proceeds for a predeterminedperiod of time at once for all lines, the window time also proceeds atonce for all lines, and the readout step sequentially proceeds for eachline. In this method, time delay occurs in each line between the windowtime and the readout step, thereby causing image lag and ghost imageupon implementation of dynamic X-ray images. Accordingly, a method ofdriving the conventional X-ray detector is not suitable for a dynamicX-ray detector which is required to have a high frame rate.

SUMMARY

Embodiments of the present invention provide a dynamic X-ray detectingpanel capable of preventing time delay in each line between window timeand readout, a dynamic X-ray detector including the same, and a methodof driving the X-ray detector.

In addition, embodiments of the present invention provide a dynamicX-ray detecting panel suitable for acquisition of a high frame rateX-ray images, a dynamic X-ray detector including the same, and a methodof driving the X-ray detector.

In accordance with one aspect of the present invention, there isprovided a method of driving a dynamic X-ray detector. The dynamic X-raydetector driving method is a method of driving a dynamic X-ray detectorincluding an X-ray detecting panel. The X-ray detecting panel includesmultiple pixels arranged in a matrix, in which each of the pixelsincludes a readout thin film transistor, a reset thin film transistor,and a photodiode, and line reset, window time and readout proceed withrespect to the multiple pixels in each row.

In one embodiment, start of window time of a subsequent row may be laterthan start of window time of a previous row and readout of the pixels inthe subsequent row may be performed after completion of readout of thepixels in the previous row.

Further, completion of readout of the previous row may coincide withcompletion of the window time of the subsequent row.

Further, a reset time may be longer than a readout time and an idle timemay be defined after completion of the readout time. The idle time maycorrespond to a difference between the reset time and the readout time.

In one embodiment, line reset of the subsequent row may start aftercompletion of line reset of the previous row.

Further, a reset time may be shorter than a readout time and an idletime may be defined after completion of the reset time. The idle timemay correspond to a difference between the reset time and the readouttime.

In another embodiment, line reset of the subsequent row may be performedbefore line reset of the previous row is completed, and line reset ofthe subsequent row may be completed a predetermined period of time aftercompletion of line reset of the previous row.

In one embodiment, each of a reset time, the window time, and a readouttime may be identically defined with respect to the pixels of all rowsin the detecting panel.

In one embodiment, upon line reset, the reset thin film transistors of acorresponding row may be in an ON state and the readout thin filmtransistors thereof may be in an OFF state; during the window time, thereset thin film transistors of a corresponding row may be in an OFFstate and the readout thin film transistors thereof may be in an OFFstate; and upon readout, the reset thin film transistors of acorresponding row may be in an OFF state and the readout thin filmtransistors thereof may be in an ON state.

Furthermore, gates of the readout thin film transistors in the pixels ofeach row may be commonly connected to one readout gate pad; drains ofthe readout thin film transistors in the pixels of each row may beconnected to different readout pads, respectively; gates of the resetthin film transistors in the pixels of each row may be commonlyconnected to one reset gate pad; drains of the reset thin filmtransistors in the multiple pixels may be commonly connected to a resetdrain pad; and the photodiode in each of the pixels may be commonlyconnected to sources of the reset thin film transistor and the readoutthin film transistor therein.

In accordance with another aspect of the present invention, a dynamicX-ray detecting panel may include: multiple pixels arranged in a matrixand each including a readout thin film transistor, a reset thin filmtransistor, and a photodiode; multiple readout gate pads each commonlyconnected to gates of the readout thin film transistors in the pixels ofone row; readout pads connected to drains of the readout thin filmtransistors in the pixels of one row, respectively; multiple reset gatepads each commonly connected to gates of the reset thin film transistorsin the pixels of each row; and at least one reset drain pad commonlyconnected to drains of the reset thin film transistors in the multiplepixels, wherein the photodiode in each of the pixels is commonlyconnected to sources of the reset thin film transistor and the readoutthin film transistor therein.

The dynamic X-ray detecting panel may further include a bias padcommonly connected to anodes (positive terminals) of the photodiodes inthe multiple pixels.

The readout pads may be commonly connected to the readout thin filmtransistors in the pixels of each column.

The dynamic X-ray detecting panel may include multiple reset drain padseach commonly connected to the drains of the reset thin film transistorsin the multiple pixels, the multiple reset drain pads being positionedat upper and lower places and/or at right and left places in thedetecting panel.

In accordance with a further aspect of the present invention, there isprovided a dynamic X-ray detector including the dynamic X-ray detectingpanel set forth above.

The dynamic X-ray detector may further include a readout gate ICconnected to the readout gate pads; a readout IC connected to thereadout pads; and a reset gate IC connected to the reset gate pads.

According to the embodiments of the present invention, the dynamic X-raydetecting panel and an X-ray detector including the same can preventtime delay in each line between window time and readout. In addition,the method of driving an X-ray detector is suitable for acquisition ofhigh frame rate X-ray images.

DRAWINGS

FIG. 1 is a schematic layout diagram of an X-ray detecting panel of aconventional dynamic X-ray detector.

FIG. 2 is a schematic diagram illustrating switching operation of areadout thin film transistor in the conventional X-ray detecting panel.

FIG. 3 is a schematic diagram illustrating drive timing of theconventional X-ray detecting panel.

FIG. 4 is a schematic layout diagram of an X-ray detecting panel of adynamic X-ray detector according to one embodiment of the presentinvention.

FIG. 5 is a schematic diagram illustrating switching operation of thinfilm transistors in the X-ray detecting panel according to theembodiment of the present invention.

FIG. 6 is a schematic diagram illustrating drive timing of the X-raydetecting panel according to the embodiment of the present invention.

FIG. 7 is a schematic diagram illustrating optional drive timings ofX-ray detecting panels according to various embodiments of the presentinvention.

DETAILED DESCRIPTION

Hereinafter, embodiments of the present invention will be described withreference to the accompanying drawings. It should be understood that thefollowing embodiments are provided for complete disclosure and thoroughunderstanding of the invention by those skilled in the art. Therefore,the present invention is not limited to the following embodiments andmay be embodied in different ways. It should be noted that the drawingsare not to precise scale and may be exaggerated in width, length, andthickness of components for descriptive convenience and clarity only. Itwill be understood that, when an element is referred to as being placed“above” or “on” another element, it can be directly placed above or onthe other element, or intervening element(s) may also be presenttherebetween. The same components will be denoted by the same referencenumerals and like components will be denoted by like reference numeralsthroughout the specification.

FIG. 4 is a schematic layout diagram of an X-ray detecting panel of adynamic X-ray detector according to one embodiment of the presentinvention. Herein, the X-ray detecting panel is suitable for indirectdetection in which detecting visible light converted by a scintillator.However, it should be understood that the present invention is notlimited thereto and may be applied to a direct detection type X-raydetecting panel for directly detecting X-rays.

Referring to FIG. 4 , the X-ray detecting panel includes multiple pixelsN, N+1, N+2, . . . , and each pixel (N-th Pixel) includes a readout thinfilm transistor (readout TFT), a reset thin film transistor (reset TFT),and a photodiode. In addition, the X-ray detecting panel may includereadout pads, readout gate pads, reset gate pads, a reset drain pad, anda bias pad.

The multiple pixels may be arranged in a matrix, but are not limitedthereto. For example, the multiple pixels may include pixels arranged in5,000×5,000 columns and rows.

Each of the readout TFT and the reset TFT may be a switching deviceincluding non-crystalline silicon, an oxide of at least one ofIn—Ga—Zn—O, or polycrystalline silicon as a semiconductor layer. Thephotodiode may be a device including non-crystalline silicon, an oxideof at least one of In—Ga—Zn—O, polycrystalline silicon, or an organiccompound as a light to electric conversion layer.

First, for example, a connection structure of the readout TFT, the resetTFT, and the photodiode in an N^(th) pixel will be described.

A readout terminal of the readout TFT, that is, a drain of the readoutTFT, is connected to a readout IC through the readout pad, and a gatethereof is connected to a readout gate IC through the readout gate pad.

A drain of the reset TFT is connected to a drain source voltage terminalVds (rst) through the reset drain pad and a gate thereof is connected toa reset gate IC through the reset gate pad.

The photodiode is connected to a bias voltage terminal Vbias through thebias pad. An anode of the photodiode may be connected to the bias padand a cathode thereof may be connected to sources of the readout TFT andthe reset TFT. Alternatively, the cathode of the photodiode may beconnected to the bias pad and the anode thereof may be connected to thesources of the readout TFT and the reset TFT.

Each of the bias pad and the reset drain pad may be commonly connectedto all of the multiple pixels N, N+1, N+2, . . . . That is, all of themultiple photodiodes in the detecting panel may be commonly connected toone bias pad and drains of the multiple reset TFTs may be commonlyconnected to one reset drain pad. In this embodiment, each of the biaspad and the reset drain pad is provided singularly. Alternatively, thedetecting panel may be provided with multiple bias pads and multiplereset drain pads. Each of the bias pads may be commonly connected to themultiple photodiodes in the detecting panel and each of the reset drainpads may be commonly connected to drains of the multiple reset TFTs inthe detecting panel. The multiple reset drain pads may be positioned atupper and lower places and/or at right and left places in the detectingpanel. This arrangement of the multiple reset drain pads can reduce aconnection length between the reset drain pad and the pixel, therebyreducing RC delay.

On the other hand, the pixels arranged in the same row may be commonlyconnected to one readout gate pad and one reset gate pad, and the pixelsarranged in different rows may be connected to different readout gatepads and different reset gate pads. That is, gates of the readout TFTsin the pixels arranged in the same row may be commonly connected to onereadout gate pad and gates of the readout TFTs in the pixels arranged indifferent rows are connected to different readout gate pads. Further,gates of the reset TFTs in the pixels arranged in the same row may becommonly connected to one reset gate pad and gates of the reset TFTs inthe pixels arranged in different rows are connected to different resetgate pads.

On the other hand, the pixels arranged in the same column may becommonly connected to one readout pad and the pixels arranged indifferent columns may be connected to different readout pads. That is,drains of the readout TFTs in the pixels arranged in the same column arecommonly connected to one readout pad and drains of the readout TFTs inthe pixels arranged in different columns are connected to differentreadout pads. Accordingly, the pixels arranged in one row are connectedto different readout pads.

With this connection arrangement of the transistors and the photodiodesin the pixels arranged in a matrix, the detection panel allows easyreset and readout operation in each line, that is, in each row, therebyproviding optimal image data for a high frame rate X-ray images.

FIG. 5 is a schematic diagram illustrating switching operation of thethin film transistors in the X-ray detecting panel according to theembodiment of the present invention.

Referring to FIG. 5 , in this embodiment, in the pixels N, N+1, N+2, . .. , line reset may be performed line by line, that is, in each row.

Upon line reset, the reset TFT is switched on and the readout TFT isswitched off. For example, gate voltage Vg (rst) is applied to the gateof the reset TFT by the reset gate IC to switch the reset TFT on andgate voltage Vg (ro) is applied to the gate of the readout TFT by thereadout gate IC to switch the readout TFT off. For example, upon linereset, the gate voltage Vg (rst) of the reset TFT may be in the range of0V to 30V, the drain-source voltage may be in the range of 0V to 20V, orthe drain may be floated. In addition, the gate voltage Vg (ro) of thereadout TFT may be in the range of 0V to −30V, the drain-source voltagemay be in the range of 0V to 20V, or the drain may be floated. On theother hand, bias voltage Vbias may be applied to the photodiode. Thebias voltage Vbias may be in the range of, for example, −10V to 10V.

By line reset, remaining charges in the pixels connected to the resetgate pad may be removed through the reset TFTs, whereby the pixel can bereset. When line reset with respect to one line (row) is completed, linereset with respect to a subsequent line may be performed. In this way,reset operation may be performed with respect to the pixels of each linein the X-ray detecting panel.

After reset is performed, window time proceeds to collect data generatedby irradiation with X-rays. In this embodiment, the term “window time”means a time in which charges generated in the photodiode by irradiationwith X-rays are saturated therein. The window time may be arbitrarilyset in consideration of charge saturation times of the photodiodes.

For the window time, the reset TFT and the readout TFT are both switchedoff. For example, gate voltage Vg (rst) is applied to the gate of thereset TFT by the reset gate IC to switch the reset TFT off and gatevoltage Vg (ro) is applied to the gate of the readout TFT by the readoutgate IC to switch the readout TFT off. For example, for the window time,the gate voltage Vg (rst) of the reset TFT may be in the range of 0V to−30V, the drain-source voltage may be in the range of 0V to 20V, or thedrain may be floated. In addition, the gate voltage Vg (ro) of thereadout TFT may be in the range of 0V to −30V, the drain-source voltagemay be in the range of 0V to 20V, or the drain may be floated. On theother hand, bias voltage Vbias may be applied to the photodiode. Thebias voltage Vbias may be in the range of, for example, −10V to 10V.

By irradiation with X-rays, photoelectric transition occurs in thephotodiode to generate charges therein. Since the readout TFT and thereset TFT are in an OFF state, the charges generated in the photodiodemay be accumulated in the photodiode or in the source of the readoutTFT.

In the readout step, the reset TFT is kept in a switched off state andthe readout TFT is switched on. For example, the gate voltage Vg (rst)is applied to the gate of the reset TFT by the reset gate IC to allowthe reset TFT to be kept in an OFF state and the gate voltage Vg (ro) isapplied to the gate of the readout TFT by the readout gate IC to switchthe readout TFT on. For example, in the readout step, the gate voltageVg (rst) of the reset TFT may be in the range of 0V to −30V, thedrain-source voltage may be in the range of 0V to 20V, or the drain maybe floated. In addition, the gate voltage Vg (ro) of the readout TFT maybe in the range of 0V to 30V, the drain-source voltage may be in therange of 0V to 20V, or the drain may be floated. On the other hand, biasvoltage Vbias may be applied to the photodiode. The bias voltage Vbiasmay be in the range of, for example, −10V to 10V.

In the readout step, the charges generated in the photodiode move fromthe source of the readout TFT to the drain to be transferred to thereadout IC through the readout pad. The readout IC may generate imagedata using data of the charges.

Line reset, window time, and readout sequentially proceed and data withrespect to one line is processed by these steps. By sequentiallyprocessing the data in each line, one frame of data with respect to allpixels can be achieved. Dynamic images can be implemented by obtainingmultiple frames of data through repetition of the process of processingthe data for each line.

A method of performing line reset, window time, and readout for eachline will be described in more detail with reference to FIG. 6 . FIG. 6is a schematic diagram illustrating drive timing of the X-ray detectingpanel according to the embodiment of the present invention. FIG. 6 showsline reset, window time, and readout with respect to a first row.

Referring to FIG. 6 , line reset, window time, and readout proceed foreach line, as described with reference to FIG. 5 . For example, linereset, window time, and readout proceed with respect to the first row.In order to reset the pixels in the first row, the reset TFTs in thepixels of the first row are switched on. Here, the reset TFTs in thepixels of the other rows may be in an OFF state, but are not limitedthereto. For example, the pixels of the other rows may be reset togetherwith the pixels in the first row.

Line reset with respect to the pixels of the first row is performed inorder to remove charges remaining in the photodiodes and the source ofthe readout TFTs or charges due to parasitic capacitance. Line reset maybe performed for a sufficient period of time to remove the remainingcharges. For example, the period of time for line reset may be set inconsideration of materials and capacities of the readout TFTs, the resetTFTs, and the photodiodes or may be set experimentally.

After line reset with respect to the first row is performed, the resetTFTs of the first row are switched off. On the other hand, the readoutTFTs of the first row are kept in an OFF state. Accordingly, chargesgenerated in the photodiodes by irradiation with X-rays are accumulatedin the photodiodes and the source of the readout TFT. The charges may besaturated in the source of the readout TFT for window time.

After the window time, the readout TFTs of the first row are switchedon. As a result, the charges accumulated in the photodiodes and thesource of each of the readout TFTs in the first row are transferred tothe readout IC through the drain of the readout TFT and the readout pad.

Readout with respect to the second row may be performed after completionof readout with respect to the first row and readout with respect to thethird row may be performed after completion of readout with respect tothe second row. Readout with respect to each row is completed throughthis process, thereby providing one frame of data. According to thisembodiment, completion of readout of an immediately previous row maycoincide with completion of window time of a subsequent row. Inaddition, start of window time of the previous row may coincide withstart of reset time of the subsequent row.

In this embodiment, timing may be set to allow readout to besuccessively performed, whereby high frame rate dynamic imaging data canbe achieved while reducing a time of one frame. However, it should beunderstood that the present invention is not limited thereto. Forexample, line reset or window time of the second row may start aftercompletion of readout of the first row.

According to this embodiment, window time and readout sequentiallyproceed for each line, whereby time delay does not occur between thewindow time and readout. Accordingly, the X-ray detecting panelaccording to this embodiment can implement high frame rate dynamicimaging without generation of image delay or afterimage unlike aconventional X-ray detecting panel.

FIG. 7 is a schematic diagram illustrating optional drive timings ofX-ray detecting panels according to various embodiments of the presentinvention.

During irradiation with X-rays, each of the pixels accumulates data byswitching the reset TFT and the readout TFT off. That is, during thewindow time, charges are accumulated in the photodiode and the source ofthe readout TFT. The window time is set to allow substantial saturationof the charges therein and is generally longer than a reset time or areadout time. On the other hand, the reset time may be the same as thereadout time or may be different therefrom, and in each case, drivetiming can be adjusted.

Referring to FIG. 7 , timing 1 indicates the case where the reset timeis the same as the readout time. When the reset time is the same as thereadout time, completion of readout of a previous row may coincide withstart of readout of a subsequent row, as described with reference toFIG. 6 . Alternatively, completion of readout of the previous row maycoincide with completion of window time of the subsequent row.Alternatively, completion of the reset time of the previous row or startof the window time of the previous row may coincide with start of thereset time of the subsequent row.

Timing 2 indicates the case where the reset time is longer than thereadout time. In this case, line reset, window time, and readout areperformed in the same way as in FIG. 6 , and completion of readout ofthe previous row does not coincide with completion of the window time ofthe subsequent row. To compensate for this problem, an idle time may bedefined. The idle time may be defined as a time corresponding to adifference between the reset time and the readout time. During the idletime, the readout TFT may be switched off.

Unlike Timing 2, Timing 3 indicates the case where the reset time isshorter than the readout time. In this case, readout of the subsequentrow starts after completion of readout of the previous row, and start ofthe window time of the previous row does not coincide with start ofreset of the subsequent row. To compensate for this problem, an idletime may be defined between the reset time and the window time. Duringthe idle time, the reset TFT may be switched off.

According to this embodiment, even when the reset time does not coincidewith the readout time, the idle time is positioned therebetween tooptimize timing drive of the detecting panel.

Although reset of the subsequent row has been described as being startedafter completion of reset of the previous row, it should be understoodthat other implementations are possible. For example, reset of all rowsmay be simultaneously started. Here, completion of the reset timediffers for each row, whereby readout can be performed without timedelay after window time.

Although some embodiments have been described herein, it should beunderstood that these embodiments are not to be construed in any way aslimiting the present invention. It should be understood that variousmodifications, variations, and alterations can be made by those skilledin the art without departing from the spirit and scope of the presentinvention.

What is claimed is:
 1. A method of driving a dynamic X-ray detectorincluding an X-ray detecting panel, the X-ray detecting panel comprisingmultiple pixels arranged in a matrix, each of the pixels including areadout thin film transistor, a reset thin film transistor, and aphotodiode, wherein line reset, window time, and readout proceed withrespect to the multiple pixels in each row.
 2. The method of driving adynamic X-ray detector according to claim 1, wherein start of windowtime of a subsequent row is later than start of window time of aprevious row and readout of the pixels in the subsequent row isperformed after completion of readout of the pixels in the subsequentrow.
 3. The method of driving a dynamic X-ray detector according toclaim 2, wherein completion of readout of the previous row coincideswith completion of the window time of the subsequent row.
 4. The methodof driving a dynamic X-ray detector according to claim 3, wherein areset time is longer than a readout time and an idle time correspondingto a difference between the reset time and the readout time is definedafter completion of the readout time.
 5. The method of driving a dynamicX-ray detector according to claim 2, wherein line reset of thesubsequent row starts after completion of line reset of the previousrow.
 6. The method of driving a dynamic X-ray detector according toclaim 5, wherein a reset time is shorter than a readout time and an idletime corresponding to a difference between the reset time and thereadout time is defined after completion of the reset time.
 7. Themethod of driving a dynamic X-ray detector according to claim 2, whereinline reset of the subsequent row is performed before completion of linereset of the previous row and line reset of the subsequent row iscompleted a predetermined period of time after completion of line resetof the previous row.
 8. The method of driving a dynamic X-ray detectoraccording to claim 1, wherein each of a reset time, the window time, anda readout time is identically defined with respect to the pixels of allrows in the detecting panel.
 9. The method of driving a dynamic X-raydetector according to claim 1, wherein: upon line reset, the reset thinfilm transistors of a corresponding row are in an ON state and thereadout thin film transistors thereof are in an OFF state; during thewindow time, the reset thin film transistors of a corresponding row arein an OFF state and the readout thin film transistors thereof are in anOFF state; and upon readout, the reset thin film transistors of acorresponding row are in an OFF state and the readout thin filmtransistors thereof are in an ON state.
 10. The method of driving adynamic X-ray detector according to claim 9, wherein: gates of thereadout thin film transistors in the pixels of each row are commonlyconnected to one readout gate pad; drains of the readout thin filmtransistors in the pixels of each row are connected to different readoutpads, respectively; gates of the reset thin film transistors in thepixels of each row are commonly connected to one reset gate pad; drainsof the reset thin film transistors in the multiple pixels are commonlyconnected to a reset drain pad; and the photodiode in each of the pixelsis commonly connected to sources of the reset thin film transistor andthe readout thin film transistor therein.
 11. A dynamic X-ray detectingpanel comprising: multiple pixels arranged in a matrix and eachcomprising a readout thin film transistor, a reset thin film transistor,and a photodiode; multiple readout gate pads each commonly connected togates of the readout thin film transistors in the pixels of one row;readout pads connected to drains of the readout thin film transistors inthe pixels of one row, respectively; multiple reset gate pads eachcommonly connected to gates of the reset thin film transistors in thepixels of one row; and at least one reset drain pad commonly connectedto the drains of the reset thin film transistors in the multiple pixels,wherein the photodiode in each of the pixels is commonly connected tosources of the reset thin film transistor and the readout thin filmtransistor therein.
 12. The dynamic X-ray detecting panel according toclaim 11, further comprising: a bias pad commonly connected to thephotodiodes in the multiple pixels.
 13. The dynamic X-ray detectingpanel according to claim 11, wherein the readout pads are commonlyconnected to the readout thin film transistors in the pixels in eachcolumn.
 14. The dynamic X-ray detecting panel according to claim 11,comprising: multiple reset drain pads each commonly connected to thedrains of the reset thin film transistors in the multiple pixels, themultiple reset drain pads being positioned at upper and lower placesand/or at right and left places in the detecting panel.
 15. A dynamicX-ray detector comprising the dynamic X-ray detecting panel according toany one of claims 11 to
 14. 16. The dynamic X-ray detector according toclaim 15, further comprising: a readout gate IC connected to the readoutgate pads; a readout IC connected to the readout pads; and a reset gateIC connected to the reset gate pads.